THE OXYGEN RATIO AFFECTING STRUCTURAL PHASE TRANSITIONS AND MEMBRANE PROPERTIES I p-SnOX:Na FABRICATED BY DC MAGNETRON REACTION SPUTTERING METHOD
Main Article Content
Abstract
The p-SnOx:Na semiconductor membrane was fabricated by DC magnetron sputtering using an alloy target composed of tin and 3 at % sodium, and an oxygen-reactive gas. The fractional oxygen gas (O2) was varied at percentages of 7%, 12%, 20%, and 45%, while the base temperature (Ts) was kept constant at 200°C during sputtering. As the oxygen ratio increased from 7% to 45%, the SnOx:Na membrane underwent a phase transition in its structure, transforming from SnO polycrystalline to amorphous SnO, Sn3O4, SnO2, and SnO2 polycrystalline phases. The SnOx:Na membrane properties were evaluated using UV-Vis spectroscopy, X-ray diffraction (XRD), and Hall effect measurements. The p-type SnO membrane was then used to fabricate a photodiode with an n-i-p structure (FTO/n-nc-Si:H/a-Si:H/p-SnO/Cu). The resulting photodiode exhibited a high ratio of Ion/Ioff = 56.
Keywords
N type SnO2, Photodiode n-i-p, P type SnO, reactive DC magnetron sputtering, Tin oxide thin films
Article Details
References
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